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Zinc dopant inspired enhancement of electron injection for CuInS2 quantum dot-sensitized solar cells
Wu, Qinqin1; Cai, Chunqi1; Zhai, Lanlan1; Wang, Jiantao1; Kong, Fantai2; Yang, Yun1; Zhang, Lijie1; Zou, Chao1; Huang, Shaoming1
2017
发表期刊RSC ADVANCES
卷号7期号:63页码:39443-39451
摘要After being doped with zinc, CuInS2 quantum dots (QDs) exhibit desired tunable optical and electronic properties, more specifically, photoluminescence emission and band gap. The former is mainly due to the intrinsic donor-acceptor transition, which, together with the improved quantum yield and large longest decay time, accounts for 95% of the whole emission profiles. The latter results in an enhanced k(et) value of 2.99 x 10(10) s(-1), greater than that for pure CuInS2 QDs by an order of magnitude. Functioning as light harvesting materials in quantum dot sensitized solar cells, zinc doped CuInS2 QDs show broadened photoresponse up to similar to 950 nm. Incident photon-to-current conversion efficiency of quantum dot sensitized solar cells achieves a maximum of 69% at 500 nm and can be maintained over 50% within the window below 750 nm. After the doping with zinc under optimized conditions, the average power conversion efficiency of solar cells under one full sun illumination demonstrates an increase of 13.2%, from 5.21% for pure CuInS2 QDs to 5.90% for doped CuInS2 QDs. It is proven that the improved performance can be attributed to a broadened optoelectronic response range and accelerated electron injection.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
资助者National Natural Science Foundation of China(51572199 ; National Natural Science Foundation of China(51572199 ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; 51420105002 ; 51420105002 ; 51302194 ; 51302194 ; 61471270) ; 61471270) ; National Natural Science Foundation of China(51572199 ; National Natural Science Foundation of China(51572199 ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; 51420105002 ; 51420105002 ; 51302194 ; 51302194 ; 61471270) ; 61471270)
DOI10.1039/c7ra06659g
关键词[WOS]SEMICONDUCTOR NANOCRYSTALS ; CHALCOPYRITE SEMICONDUCTOR ; PHOTOVOLTAIC PERFORMANCE ; LIGAND-EXCHANGE ; DEFECT PHYSICS ; EFFICIENCY ; NANOPARTICLES ; ELECTROLUMINESCENCE ; PHOTOLUMINESCENCE ; LUMINESCENCE
收录类别SCI
语种英语
资助者National Natural Science Foundation of China(51572199 ; National Natural Science Foundation of China(51572199 ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; 51420105002 ; 51420105002 ; 51302194 ; 51302194 ; 61471270) ; 61471270) ; National Natural Science Foundation of China(51572199 ; National Natural Science Foundation of China(51572199 ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; Key Lab of Novel Thin Film Solar Cells, Chinese Academy of Sciences(KF201603) ; 51420105002 ; 51420105002 ; 51302194 ; 51302194 ; 61471270) ; 61471270)
WOS研究方向Chemistry
WOS类目Chemistry, Multidisciplinary
WOS记录号WOS:000407963500006
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/33608
专题应用技术研究所
作者单位1.Wenzhou Univ, Coll Chem & Mat Engn, Zhejiang Key Lab Carbon Mat, Wenzhou 325027, Zhejiang, Peoples R China
2.Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Novel Thin Film Solar Cells, Hefei 230088, Anhui, Peoples R China
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GB/T 7714
Wu, Qinqin,Cai, Chunqi,Zhai, Lanlan,et al. Zinc dopant inspired enhancement of electron injection for CuInS2 quantum dot-sensitized solar cells[J]. RSC ADVANCES,2017,7(63):39443-39451.
APA Wu, Qinqin.,Cai, Chunqi.,Zhai, Lanlan.,Wang, Jiantao.,Kong, Fantai.,...&Huang, Shaoming.(2017).Zinc dopant inspired enhancement of electron injection for CuInS2 quantum dot-sensitized solar cells.RSC ADVANCES,7(63),39443-39451.
MLA Wu, Qinqin,et al."Zinc dopant inspired enhancement of electron injection for CuInS2 quantum dot-sensitized solar cells".RSC ADVANCES 7.63(2017):39443-39451.
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