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Optical and defect properties of S-doped and Al-doped GaSe crystals
Huang, Chang-Bao; Wu, Hai-Xin; Ni, You-Bao; Wang, Zhen-You; Chen, Shi-Jing
2017-08-01
发表期刊CHINESE PHYSICS B
卷号26期号:9
摘要S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S-Se(0) or Al-Ga(+1) substitutional defects in thelayer GaSe structure, and the positive center of Al-Ga(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.
文章类型Article
关键词Doped Gase Crystals Defect Optical Properties Mechanical Properties
WOS标题词Science & Technology ; Physical Sciences
资助者Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128)
DOI10.1088/1674-1056/26/9/094211
关键词[WOS]GROWTH ; SHG
收录类别SCI
语种英语
资助者Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128)
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000409465700011
引用统计
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/33609
专题中科院安徽光学精密机械研究所
作者单位Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
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GB/T 7714
Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,et al. Optical and defect properties of S-doped and Al-doped GaSe crystals[J]. CHINESE PHYSICS B,2017,26(9).
APA Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,Wang, Zhen-You,&Chen, Shi-Jing.(2017).Optical and defect properties of S-doped and Al-doped GaSe crystals.CHINESE PHYSICS B,26(9).
MLA Huang, Chang-Bao,et al."Optical and defect properties of S-doped and Al-doped GaSe crystals".CHINESE PHYSICS B 26.9(2017).
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