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Optical and defect properties of S-doped and Al-doped GaSe crystals
Huang, Chang-Bao; Wu, Hai-Xin; Ni, You-Bao; Wang, Zhen-You; Chen, Shi-Jing
2017-08-01
Source PublicationCHINESE PHYSICS B
Volume26Issue:9
AbstractS-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S-Se(0) or Al-Ga(+1) substitutional defects in thelayer GaSe structure, and the positive center of Al-Ga(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.
SubtypeArticle
KeywordDoped Gase Crystals Defect Optical Properties Mechanical Properties
WOS HeadingsScience & Technology ; Physical Sciences
Funding OrganizationKnowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128)
DOI10.1088/1674-1056/26/9/094211
WOS KeywordGROWTH ; SHG
Indexed BySCI
Language英语
Funding OrganizationKnowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128) ; Knowledge Innovation Program of the Chinese Academy of Sciences(CXJJ-16M128)
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000409465700011
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/33609
Collection中科院安徽光学精密机械研究所
AffiliationChinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,et al. Optical and defect properties of S-doped and Al-doped GaSe crystals[J]. CHINESE PHYSICS B,2017,26(9).
APA Huang, Chang-Bao,Wu, Hai-Xin,Ni, You-Bao,Wang, Zhen-You,&Chen, Shi-Jing.(2017).Optical and defect properties of S-doped and Al-doped GaSe crystals.CHINESE PHYSICS B,26(9).
MLA Huang, Chang-Bao,et al."Optical and defect properties of S-doped and Al-doped GaSe crystals".CHINESE PHYSICS B 26.9(2017).
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