Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

doi:10.1038/s41467-017-00640-2

HFCAS OpenIR > 中科院强磁场科学中心

	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
	Yin, Xinmao 1,2,3; Wang, Qixing 2; Cao, Liang 2,4; Tang, Chi Sin 2,5; Luo, Xin 2,6,7,8; Zheng, Yujie 2; Wong, Lai Mun 9; Wang, Shi Jie 9; Quek, Su Ying 2,6,7; Zhang, Wenjing 1; Rusydi, Andrivo 2,3,5,10; Wee, Andrew T. S.2,5,6,7
	2017-09-07
发表期刊	NATURE COMMUNICATIONS
摘要	Polymorphism of two-dimensional transition metal dichalcogenides such as molybdenum disulfide (MoS2) exhibit fascinating optical and transport properties. Here, we observe a tunable inverted gap (similar to 0.50 eV) and a fundamental gap (similar to 0.10 eV) in quasimetallic monolayer MoS2. Using spectral-weight transfer analysis, we find that the inverted gap is attributed to the strong charge-lattice coupling in two-dimensional transition metal dichalcogenides ( 2D-TMDs). A comprehensive experimental study, supported by theoretical calculations, is conducted to understand the transition of monolayer MoS2 on gold film from trigonal semiconducting 1H phase to the distorted octahedral quasimetallic 1T' phase. We clarify that electron doping from gold, facilitated by interfacial tensile strain, is the key mechanism leading to its 1H-1T' phase transition, thus resulting in the formation of the inverted gap. Our result shows the importance of charge-lattice coupling to the intrinsic properties of the inverted gap and polymorphism of MoS2, thereby unlocking new possibilities for 2D-TMD-based device fabrication.
文章类型	Article
WOS标题词	Science & Technology
DOI	10.1038/s41467-017-00640-2
关键词[WOS]	LAYER MOLYBDENUM-DISULFIDE ; CHEMICAL-VAPOR-DEPOSITION ; PHASE-TRANSITION ; ELECTRONIC-STRUCTURE ; ATOMIC LAYERS ; THIN-FILMS ; MOTE2 ; SUPERCONDUCTIVITY ; HETEROSTRUCTURES ; DICHALCOGENIDES
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; National Natural Science Foundation of China(51472164) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; Natural Science Foundation of SZU(000050) ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 1000 Talents Program for Young Scientists of China ; 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Educational Commission of Guangdong Province(2015KGJHZ006) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; Science and Technology Planning Project of Guangdong Province(2016B050501005) ; 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Singapore National Research Foundation(NRF-CRP8-2011-06 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; MOE(MOE2015-T2-1-099 ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; PHC Merlion Project ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; FRC(R-144-000-368-112 ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; NRF-CRP15-2015-01) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; MOE2015-T2-2-147) ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; R-144-000-346-112 ; 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WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000409997500020
引用统计	被引频次：80[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/33701
专题	中科院强磁场科学中心
作者单位	1.Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov,Coll Optoelect Engn, Shenzhen 518060, Peoples R China 2.Natl Univ Singapore, Dept Phys, Fac Sci, Singapore 117542, Singapore 3.Natl Univ Singapore, SSLS, Singapore 117603, Singapore 4.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China 5.Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore 6.Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore 7.Natl Univ Singapore, Graphene Res Ctr, Singapore 117551, Singapore 8.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon 999077, Hong Kong, Peoples R China 9.ASTAR, IMRE, 2 Fusionopolis Way, Innovis 138634, Singapore 10.Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore
推荐引用方式 GB/T 7714	Yin, Xinmao,Wang, Qixing,Cao, Liang,et al. Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling[J]. NATURE COMMUNICATIONS,2017,8.
APA	Yin, Xinmao.,Wang, Qixing.,Cao, Liang.,Tang, Chi Sin.,Luo, Xin.,...&Wee, Andrew T. S..(2017).Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling.NATURE COMMUNICATIONS,8.
MLA	Yin, Xinmao,et al."Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling".NATURE COMMUNICATIONS 8(2017).