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Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus
Gong, Peng-Lai1,2,3; Deng, Bei1; Huang, Liang-Feng4; Hu, Liang1; Wang, Wei-Chao2,3; Liu, Da-Yong5; Shi, Xing-Qang1; Zeng, Zhi5,6; Zou, Liang-Jian5,6
2017-09-28
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
摘要Very recently, in spite of various efforts in searching for twodimensional topological Dirac semimetals (2D TDSMs) in phosphorene, there remains a lack of experimentally efficient way to activate such phase transition and the underlying mechanism for the topological phase acquisition is still controversial. Here, from first-principles calculations in combination with a band-sorting technique based on kp theory, a layer-pressure topological phase diagram is obtained and some of the controversies are clarified. We demonstrate that, compared with tuning by external electric fields, strain or doping by adsorption, hydrostatic pressure can be an experimentally more feasible way to activate the topological phase transition for 2D TDSM acquisition in phosphorene. More importantly, the resultant TDSM state is a pristine phase possessing a single pair of symmetry-protected Dirac cones right at the Fermi level, in startling contrast to the pressured bulk black phosphorus where only a carrier-mixed Dirac state can be obtained. We corroborate that the Dirac points are robust under external perturbation as long, as the glide-plane symmetry preserves. Our findings provide a means to realize 2D pristine TDSM in a more achievable manner, which could be crucial in the realization of controllable TDSM states in phosphorene and related 2D materials.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1021/acs.jpcc.7b08926
关键词[WOS]MOLYBDENUM-DISULFIDE ; HYDROSTATIC-PRESSURE ; LAYER ; MOS2 ; CONFINEMENT ; MONOLAYER ; DENSITY
收录类别SCI
语种英语
项目资助者National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; National key research and development program(2016YFB0901600) ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; NSF of China(11474145 ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Nanshan Key Lab on Nonvolatile Memory Grant(KC2015ZDYF0003A) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)(U1501501) ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11334003 ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010) ; 11534010)
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000412150500044
引用统计
被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/33705
专题中科院固体物理研究所
作者单位1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
2.Nankai Univ, Dept Elect, Tianjin 300071, Peoples R China
3.Nankai Univ, Tianjin Key Lab Photoelect Thin Film Device & Tec, Tianjin 300071, Peoples R China
4.Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
5.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, POB 1129, Hefei 230031, Anhui, Peoples R China
6.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
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GB/T 7714
Gong, Peng-Lai,Deng, Bei,Huang, Liang-Feng,et al. Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(38):20931-20936.
APA Gong, Peng-Lai.,Deng, Bei.,Huang, Liang-Feng.,Hu, Liang.,Wang, Wei-Chao.,...&Zou, Liang-Jian.(2017).Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus.JOURNAL OF PHYSICAL CHEMISTRY C,121(38),20931-20936.
MLA Gong, Peng-Lai,et al."Robust and Pristine Topological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorus".JOURNAL OF PHYSICAL CHEMISTRY C 121.38(2017):20931-20936.
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