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Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields
Li, L. L.1,2; Moldovan, D.1; Xu, W.2,3; Peeters, F. M.1
2017-10-10
Source PublicationPHYSICAL REVIEW B
Volume96Issue:15
AbstractUsing the tight-binding approach, we investigate the electronic properties of bilayer phosphorene (BLP) quantum dots (QDs) in the presence of perpendicular electric and magnetic fields. Since BLP consists of two coupled phosphorene layers, it is of interest to examine the layer-dependent electronic properties of BLP QDs, such as the electronic distributions over the two layers and the so-produced layer-polarization features, and to see how these properties are affected by the magnetic field and the bias potential. We find that in the absence of a bias potential only edge states are layer polarized while the bulk states are not, and the layer-polarization degree (LPD) of the unbiased edge states increases with increasing magnetic field. However, in the presence of a bias potential both the edge and bulk states are layer polarized, and the LPD of the bulk (edge) states depends strongly (weakly) on the interplay of the bias potential and the interlayer coupling. At high magnetic fields, applying a bias potential renders the bulk electrons in a BLP QD to be mainly distributed over the top or bottom layer, resulting in layer-polarized bulk Landau levels (LLs). In the presence of a large bias potential that can drive a semiconductor-to-semimetal transition in BLP, these bulk LLs exhibit different magnetic-field dependences, i.e., the zeroth LLs exhibit a linearlike dependence on the magnetic field while the other LLs exhibit a square-root-like dependence.
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
Funding OrganizationFlemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences
DOI10.1103/PhysRevB.96.155425
WOS KeywordLAYER BLACK PHOSPHORUS
Indexed BySCI
Language英语
Funding OrganizationFlemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000412699800005
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/33716
Collection中科院固体物理研究所
Affiliation1.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
3.Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China
Recommended Citation
GB/T 7714
Li, L. L.,Moldovan, D.,Xu, W.,et al. Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields[J]. PHYSICAL REVIEW B,2017,96(15).
APA Li, L. L.,Moldovan, D.,Xu, W.,&Peeters, F. M..(2017).Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields.PHYSICAL REVIEW B,96(15).
MLA Li, L. L.,et al."Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields".PHYSICAL REVIEW B 96.15(2017).
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