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lePressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3
An, Chao1,2; Lu, Pengchao3; Chen, Xuliang1; Zhou, Yonghui1; Wu, Juefei3; Zhou, Ying1,2; Park, Changyong4; Gu, Chuanchuan1; Zhang, Bowen1,2; Yuan, Yifang1,5; Sun, Jian3,6; Yang, Zhaorong1,6
2017-10-16
Source PublicationPHYSICAL REVIEW B
Volume96Issue:13Pages:1-6
AbstractWe present in situ high-pressure synchrotron x-ray diffraction (XRD) and electrical transport measurements on quasi-one-dimensional single-crystal TiS3 up to 29.9-39.0 GPa in diamond-anvil cells, coupled with first-principles calculations. Counterintuitively, the conductive behavior of semiconductor TiS3 becomes increasingly insulating with pressure until P-C1 similar to 12 GPa, where extremes in all three axial ratios are observed. Upon further compression to P-C2 similar to 22 GPa, the XRD data evidence a structural phase transition. Based on our theoretical calculations, this structural transition is determined to be isosymmetric, i.e., without change of the structural symmetry (P2(1)/m), mainly resulting from rearrangement of the dangling S-2 pair along the a axis.
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
Funding OrganizationNational Key Research and Development Program of China(2016YFA0401804 ; NSFC(U1632275 ; NSF of Anhui Province(1708085QA19) ; NSF of Jiangsu Province(BK20150012) ; Director's Fund of Hefei Institutes of Physical Science, CAS(YZJJ201621) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund ; DOE-NNSA(DE-NA0001974) ; DOE-BES(DE-FG02-99ER45775) ; NSF ; US Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory(DE-AC0206CH11357) ; 2016YFA0300404 ; 11574323 ; 2015CB921202) ; 51372112 ; 11574133) ; National Key Research and Development Program of China(2016YFA0401804 ; NSFC(U1632275 ; NSF of Anhui Province(1708085QA19) ; NSF of Jiangsu Province(BK20150012) ; Director's Fund of Hefei Institutes of Physical Science, CAS(YZJJ201621) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund ; DOE-NNSA(DE-NA0001974) ; DOE-BES(DE-FG02-99ER45775) ; NSF ; US Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory(DE-AC0206CH11357) ; 2016YFA0300404 ; 11574323 ; 2015CB921202) ; 51372112 ; 11574133)
DOI10.1103/PhysRevB.96.134110
WOS KeywordTHERMOELECTRIC PROPERTIES ; ELECTRONIC-PROPERTIES ; SEMICONDUCTOR ; TRICHALCOGENIDES ; PREDICTION ; PRESSURE ; STRAIN ; GAP
Indexed BySCI
Language英语
Funding OrganizationNational Key Research and Development Program of China(2016YFA0401804 ; NSFC(U1632275 ; NSF of Anhui Province(1708085QA19) ; NSF of Jiangsu Province(BK20150012) ; Director's Fund of Hefei Institutes of Physical Science, CAS(YZJJ201621) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund ; DOE-NNSA(DE-NA0001974) ; DOE-BES(DE-FG02-99ER45775) ; NSF ; US Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory(DE-AC0206CH11357) ; 2016YFA0300404 ; 11574323 ; 2015CB921202) ; 51372112 ; 11574133) ; National Key Research and Development Program of China(2016YFA0401804 ; NSFC(U1632275 ; NSF of Anhui Province(1708085QA19) ; NSF of Jiangsu Province(BK20150012) ; Director's Fund of Hefei Institutes of Physical Science, CAS(YZJJ201621) ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund ; DOE-NNSA(DE-NA0001974) ; DOE-BES(DE-FG02-99ER45775) ; NSF ; US Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory(DE-AC0206CH11357) ; 2016YFA0300404 ; 11574323 ; 2015CB921202) ; 51372112 ; 11574133)
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000413050000002
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/33795
Collection中科院强磁场科学中心
Affiliation1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
3.Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
4.Carnegie Inst Sci, Geophys Lab, HPCAT, Argonne, IL 60439 USA
5.Zhengzhou Univ, Dept Phys & Engn, Zhengzhou 450052, Henan, Peoples R China
6.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Recommended Citation
GB/T 7714
An, Chao,Lu, Pengchao,Chen, Xuliang,et al. lePressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3[J]. PHYSICAL REVIEW B,2017,96(13):1-6.
APA An, Chao.,Lu, Pengchao.,Chen, Xuliang.,Zhou, Yonghui.,Wu, Juefei.,...&Yang, Zhaorong.(2017).lePressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3.PHYSICAL REVIEW B,96(13),1-6.
MLA An, Chao,et al."lePressure-induced anomalous enhancement of insulating state and isosymmetric structural transition in quasi-one-dimensional TiS3".PHYSICAL REVIEW B 96.13(2017):1-6.
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