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Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary
Li, Siqian1; Lei, Huaping2; Wang, Yi3; Ullah, Md Barkat4; Chen, Jun1; Avrutin, Vitaliy4; Ozgur, Umit4; Morkoc, Hadis4; Ruterana, Pierre1
2018-10-31
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume10Issue:43Pages:37651-37660
Corresponding AuthorLi, Siqian(siqian.li@ensicaen.fr)
AbstractIn semiconductor heterojunction, polarity critically governs the physical properties, with an impact on electronic or optoelectronic devices through the presence of pyroelectric and piezoelectric fields at the active heteropolar interface. In the present work, the abrupt O-polar ZnO/Ga-polar GaN heterointerface was successfully achieved by using high O/Zn ratio flux during the ZnO nucleation growth. Atomic-resolution high-angle annular dark-field and bright field transmission electron microscopy observation revealed that this polarity inversion confines within one monolayer by forming the (0001) plane inversion domain boundary (IDB) at the ZnO/GaN heterointerface. Through theoretical calculation and topology analysis, the geometry of this IDB was determined to possess an octahedral Ga atomic layer in the interface, with one O/N layer symmetrically bonded at the tetrahedral site. The computed electronic structure of all considered IDBs revealed a metallic character at the heterointerface. More interestingly, the presence of two-dimensional (2D) hole gas (2DHG) or 2D electron gas (2DEG) is uncovered by investigating the chemical bonding and charge transfer at the heterointerface. This work not only clarifies the polarity control and interfacial configuration of the O-polar ZnO/Ga-polar GaN heterojunction but, more importantly, also gives insight into their further application on heterojunction field-effect transistors as well as hybrid ZnO/GaN optoelectronic devices. Moreover, such polarity control at the monolayer scale might have practical implications for heterojunction devices based on other polar semiconductors.
KeywordZnO/GaN heterointerface (0001) plane IDBs polarity control energetic stability 2DHG 2DEG
Funding OrganizationCRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR)
DOI10.1021/acsami.8b12202
WOS KeywordTRANSIENT ELECTRON-TRANSPORT ; MOLECULAR-BEAM EPITAXY ; LIGHT-EMITTING DIODE ; OPTOELECTRONIC PROPERTIES ; ATOMIC-STRUCTURE ; STEADY-STATE ; GAN LAYERS ; ZINC-OXIDE ; THIN-FILM ; ZNO
Indexed BySCI
Language英语
Funding ProjectCRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie[2016009] ; China Scholarship Council[201508420147] ; National Science Foundation of China[11575230] ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY23] ; Air Force Office of Scientific Research (AFOSR)[FA9550-12-1-0094]
Funding OrganizationCRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; National Science Foundation of China ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR) ; Air Force Office of Scientific Research (AFOSR)
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000449239600116
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/34568
Collection中科院固体物理研究所
Corresponding AuthorLi, Siqian
Affiliation1.ENSICAEN, UCBN, CEA, CIMAP,UMR 6252,CNRS, 6 Blvd Marechal Juin, F-14050 Caen, France
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
3.Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
4.Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
Recommended Citation
GB/T 7714
Li, Siqian,Lei, Huaping,Wang, Yi,et al. Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(43):37651-37660.
APA Li, Siqian.,Lei, Huaping.,Wang, Yi.,Ullah, Md Barkat.,Chen, Jun.,...&Ruterana, Pierre.(2018).Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary.ACS APPLIED MATERIALS & INTERFACES,10(43),37651-37660.
MLA Li, Siqian,et al."Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary".ACS APPLIED MATERIALS & INTERFACES 10.43(2018):37651-37660.
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