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Ultrathin GaGeTe p-type transistors
Wang, Weike1; Li, Liang2; Zhang, Zhitao3; Yang, Jiyong3; Tang, Dongsheng1; Zhai, Tianyou2
2017-11-13
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume111Issue:20Pages:3
Abstract

We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 10(3), hole mobility of 0.45 cm(2) V-1 s(-1), and photoresponsivity of 3.6 A W-1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors. Published by AIP Publishing.

DOI10.1063/1.4998350
WOS KeywordRAMAN-SPECTRUM ; LAYER
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11604340] ; National Natural Science Foundation of China[11304321] ; National Natural Science Foundation of China[11574081] ; China Postdoctoral Science Foundation[2015LH0018] ; China Postdoctoral Science Foundation[2017M610474]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000415648000049
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/36080
Collection中科院强磁场科学中心
Corresponding AuthorTang, Dongsheng; Zhai, Tianyou
Affiliation1.Hunan Normal Univ, Coll Phys & Informat Sci, Minist Educ,Synerget Innovat Ctr Quantum Effects, Key Lab Low Dimens Quantum Structures & Quantum C, Changsha 410081, Hunan, Peoples R China
2.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Wang, Weike,Li, Liang,Zhang, Zhitao,et al. Ultrathin GaGeTe p-type transistors[J]. APPLIED PHYSICS LETTERS,2017,111(20):3.
APA Wang, Weike,Li, Liang,Zhang, Zhitao,Yang, Jiyong,Tang, Dongsheng,&Zhai, Tianyou.(2017).Ultrathin GaGeTe p-type transistors.APPLIED PHYSICS LETTERS,111(20),3.
MLA Wang, Weike,et al."Ultrathin GaGeTe p-type transistors".APPLIED PHYSICS LETTERS 111.20(2017):3.
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