Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible

doi:10.1007/s12633-017-9602-5

HFCAS OpenIR > 应用技术研究所

	Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible
	Bai, Xiaolong 1,2; Ban, Boyuan1 ; Li, Jingwei1 ; Fu, Zhiqiang 2; Peng, Zhijian 2; Wang, Chengbiao 2; Chen, Jian1
	2018-07-01
发表期刊	SILICON
ISSN	1876-990X
通讯作者	Chen, Jian(jchen@ipp.ac.cn)
摘要	The distribution characteristic and segregation behavior of metal impurities during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys have been investigated. The morphologies of the alloys and impurity phases were observed by optical microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The concentration profiles of representative metal impurities Al, Fe and Ti were measured by inductively coupled plasma optical emission spectrometry. The results indicate that the metal impurities segregate into the eutectic Al-Si melt during the growth of primary Si flakes and gradually segregate towards the top of each ingot during directional solidification. A concept of apparent segregation coefficient is proposed to characterize the segregation behavior of impurity elements. The apparent segregation coefficients of metal impurities decrease with increase in solidification temperature of the Al-Si alloys.
关键词	Segregation Al-Si alloy Directional solidification Apparent segregation coefficient
DOI	10.1007/s12633-017-9602-5
关键词[WOS]	METALLURGICAL SILICON ; B REMOVAL ; P SYSTEM ; PURIFICATION ; MECHANISM ; PLASMA ; ALLOY ; IRON ; TI
收录类别	SCI
语种	英语
资助项目	Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; National Natural Science Foundation of China[51474201] ; National Natural Science Foundation of China[51404231] ; Anhui Provincial Natural Science Foundation[1508085QE81] ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows[2016LH0017] ; China Postdoctoral Science Foundation[2014M561846] ; CASHIPS Director's Funds[YYJJ201624] ; 100 Talent Program of Chinese Academy of Sciences[2012065] ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; National Natural Science Foundation of China[51474201] ; National Natural Science Foundation of China[51404231] ; Anhui Provincial Natural Science Foundation[1508085QE81] ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows[2016LH0017] ; China Postdoctoral Science Foundation[2014M561846] ; CASHIPS Director's Funds[YYJJ201624] ; 100 Talent Program of Chinese Academy of Sciences[2012065]
项目资助者	Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; 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WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000435580700006
出版者	SPRINGER
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/37298
专题	应用技术研究所
通讯作者	Chen, Jian
作者单位	1.Chinese Acad Sci, Key Lab Photovolat & Energy Conservat Mat, Inst Appl Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China 2.China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Bai, Xiaolong,Ban, Boyuan,Li, Jingwei,et al. Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible[J]. SILICON,2018,10(4):1283-1290.
APA	Bai, Xiaolong.,Ban, Boyuan.,Li, Jingwei.,Fu, Zhiqiang.,Peng, Zhijian.,...&Chen, Jian.(2018).Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible.SILICON,10(4),1283-1290.
MLA	Bai, Xiaolong,et al."Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible".SILICON 10.4(2018):1283-1290.