Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation

doi:10.1016/j.diamond.2018.07.019

HFCAS OpenIR > 中科院固体物理研究所

	Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation
	Liu, L. Y.1,2; Shen, T. L.3; Liu, A.4; Zhang, T.5 ; Bai, S.4; Xu, S. R.6; Jin, P.2; Hao, Y.6; Ouyang, X. P.1,2,7
	2018-09-01
发表期刊	DIAMOND AND RELATED MATERIALS
ISSN	0925-9635
通讯作者	Liu, L. Y.(liulinyue@nint.ac.cn)
摘要	A long-standing objective in neutron detection is to develop high-quality detectors with good radiation resistance; silicon carbide (SiC) detectors are considered to be good options. Although SiC neutron detectors have been successfully developed, the performance of SiC detectors leave much to be desired: performance degradation is inevitable in neutron irradiation and becomes serious above the neutron fluence of 10(14) n/cm(2) (Dulloo et al., 1999, 1997; Wu et al., 2014; Nava et al., 2006; Sze and Ng, n.d.; Liu et al., 2017). The defects induced in the depletion region of SiC detector were generally considered to be responsible for it, but after analyzing performance degradation and characterizing radiation defects of Ni/4H-SiC Schottky diode detectors, which were irradiated in Xi'an pulsed reactor with a fluence rate of 2.05 x 10(13) n/cm(2) s and a total radiation fluence of 2.1 x 10(16) n/cm(2) (mixture of thermal and fast neutrons), it is found that interface performance degradation of nickel electrode and SiC epitaxial layer induced by neutron irradiation can also influence its performance. Thus the design of SiC neutron detectors should not only pay attention to the quality of the detector's sensitive layer (SiC epitaxial layer) but also consider radiation effects on the interface between electrode and SiC epitaxial layer, which has significant importance for improving performance of SiC neutron detectors and extend their application to intense radiation fields.
关键词	Silicon carbide Neutron detector Performance degradation Irradiation defect
DOI	10.1016/j.diamond.2018.07.019
关键词[WOS]	CARBIDE SEMICONDUCTOR-DETECTORS ; SILICON ; PHOTOLUMINESCENCE ; MICROSCOPY ; EVOLUTION ; BORON
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[11605140] ; National Natural Science Foundation of China[11435010] ; National Natural Science Foundation of China[61504099] ; National Natural Science Foundation of China[11605140] ; National Natural Science Foundation of China[11435010] ; National Natural Science Foundation of China[61504099]
项目资助者	National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000445719300032
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/39138
专题	中科院固体物理研究所
通讯作者	Liu, L. Y.
作者单位	1.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China 2.Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Shaanxi, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 4.Nanjing Elect Devices Inst, Bldg 03,8 Xingwen Rd, Nanjing 210016, Jiangsu, Peoples R China 5.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China 6.Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China 7.Xijing Univ, Shaanxi Engn Res Ctr Pulse Source & Its Applicat, Xian 710023, Shaanxi, Peoples R China
推荐引用方式 GB/T 7714	Liu, L. Y.,Shen, T. L.,Liu, A.,et al. Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation[J]. DIAMOND AND RELATED MATERIALS,2018,88:256-261.
APA	Liu, L. Y..,Shen, T. L..,Liu, A..,Zhang, T..,Bai, S..,...&Ouyang, X. P..(2018).Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation.DIAMOND AND RELATED MATERIALS,88,256-261.
MLA	Liu, L. Y.,et al."Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation".DIAMOND AND RELATED MATERIALS 88(2018):256-261.