All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent

doi:10.1002/adfm.201802288

HFCAS OpenIR > 中科院固体物理研究所

	All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent
	Gao, Xu Dong 1,2; Fei, Guang Tao1,2 ; Zhang, Yao 3,4,5; Zhang, Li De 1,2; Hu, Ze Min 1,2
	2018-10-04
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
摘要	Although phototransistors for controlling photocurrent with electricity have been studied intensively for several decades, transistors with all-optical inputs that can control the photocurrent with light have not been investigated thus far. In this paper, a plasmonic porous Ag/TiO2 transistor is fabricated with all-optical inputs. One light input acts as the source to generate a plasmonic-hot-electron photocurrent, while the other gate light changes the current channel by adjusting the height of an Ag/TiO2 Schottky barrier. As a result, the plasmon-induced photocurrent generated by the source light can be enhanced by several to one hundred times by controlling the gate light. In addition to signal enhancement, the device can also be used for signal modulation and switching.
关键词	Ag/TiO2 oxygen adsorption photocurrents plasmon-induced currents transistors
DOI	10.1002/adfm.201802288
关键词[WOS]	PHOTODETECTORS ; PHOTORESPONSE ; NANOPARTICLES ; NANORODS
收录类别	SCI
语种	英语
资助项目	Foundation of Director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY20] ; National Natural Science Foundation of China[51671183] ; National Natural Science Foundation of China[51502294] ; National Natural Science Foundation of China[51471162] ; National Natural Science Foundation of China[51701207] ; National Basic Research Program of China (973 Program)[2012CB932303] ; CAS/SAFEA International Partnership Program for Creative Research Teams ; CAS/SAFEA International Partnership Program for Creative Research Teams ; National Basic Research Program of China (973 Program)[2012CB932303] ; National Natural Science Foundation of China[51701207] ; National Natural Science Foundation of China[51471162] ; National Natural Science Foundation of China[51502294] ; National Natural Science Foundation of China[51671183] ; Foundation of Director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY20]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000446155700008
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/39280
专题	中科院固体物理研究所
通讯作者	Fei, Guang Tao; Zhang, Yao
作者单位	1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, POB 1129, Hefei 230031, Anhui, Peoples R China 3.Univ Basque Country, CSIC, Mat Phys Ctr, ES-20018 Donostia San Sebastian, Spain 4.DIPC, ES-20018 Donostia San Sebastian, Spain 5.Univ Sci & Technol China, Microscale & Synerget Innovat Ctr Quantum Informa, Hefei Natl Lab Phys Sci, Hefei 230026, Anhui, Peoples R China
第一作者单位	中科院固体物理研究所
通讯作者单位	中科院固体物理研究所
推荐引用方式 GB/T 7714	Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,et al. All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(40):8.
APA	Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,Zhang, Li De,&Hu, Ze Min.(2018).All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent.ADVANCED FUNCTIONAL MATERIALS,28(40),8.
MLA	Gao, Xu Dong,et al."All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent".ADVANCED FUNCTIONAL MATERIALS 28.40(2018):8.

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