Institutional Repository of Chinese Acad Sci, High Field Magnet Lab,Hefei 230031, Anhui, Peoples R China
Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array | |
Chen, Xue-Xia1,2; Xiao, Xu-Hua1,2,3; Shi, Zhi-Feng1,2; Du, Rui1,2; Li, Xin-Jian1,2 | |
2018-10-30 | |
发表期刊 | JOURNAL OF ALLOYS AND COMPOUNDS |
ISSN | 0925-8388 |
通讯作者 | Li, Xin-Jian(lixj@zzu.edu.cn) |
摘要 | Using silicon nanoporous pillar array (Si-NPA) as substrate, a kind of GaN/Si nanoheterostructure (GaN/Si-NPA) is prepared by depositing GaN nanocrystallites on Si-NPA with chemical vapor deposition method. The morphology characteristics and optical properties of GaN/Si-NPA are investigated systematically. Based on GaN/ Si-NPA, a self-powered ultraviolet (UV) photodetector (PD) with device structure of ITO/GaN/Si-NPA/sc-Si/Ag is constructed by depositing ITO on GaN layer and silver on single crystal silicon, respectively. At zero bias voltage without an external power supply, GaN/Si-NPA exhibits a responsivity of 0.072 mA/W, a high current on/off ratio of similar to 10(4) (16 mu W/cm(2)) and fast response speeds of 39.98/40.10 ms under an UV light irradiation at 305 nm. The high performance of GaN/Si-NPA is attributed to the built-in electric field in the heterojunction, which is interpreted via building the energy-band diagrams. The results illustrate that GaN/ Si-NPA might be a suitable material system for self-powered UV PDs. (C) 2018 Elsevier B.V. All rights reserved. |
关键词 | Gallium nitride Silicon nanoporous pillar array Nanoheterostructure Ultraviolet photodetector |
DOI | 10.1016/j.jallcom.2018.07.066 |
关键词[WOS] | LIQUID-SOLID MECHANISM ; HIGH-PERFORMANCE ; UV PHOTODETECTOR ; POROUS SILICON ; GROWTH ; HETEROJUNCTION ; PHOTOLUMINESCENCE ; DETECTORS ; EMISSION ; JUNCTION |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[61774136] ; National Natural Science Foundation of China[61176044] ; National Natural Science Foundation of China[11504331] ; National Natural Science Foundation of China[61774136] ; National Natural Science Foundation of China[61176044] ; National Natural Science Foundation of China[11504331] |
项目资助者 | National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China |
WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
WOS记录号 | WOS:000446316500045 |
出版者 | ELSEVIER SCIENCE SA |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/39584 |
专题 | 中科院强磁场科学中心 |
通讯作者 | Li, Xin-Jian |
作者单位 | 1.Zhengzhou Univ, Dept Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China 2.Zhengzhou Univ, Phys Mat Lab, Daxue Rd 75, Zhengzhou 450052, Peoples R China 3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,et al. Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,767:368-373. |
APA | Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,Du, Rui,&Li, Xin-Jian.(2018).Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array.JOURNAL OF ALLOYS AND COMPOUNDS,767,368-373. |
MLA | Chen, Xue-Xia,et al."Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array".JOURNAL OF ALLOYS AND COMPOUNDS 767(2018):368-373. |
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