Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3

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	Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3
其他题名	Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3
	Hu Xinbo 1; Hu Ling1 ; Luo Xuan1 ; Zhao Bangchuan1 ; Sun Yuping1
	2013
发表期刊	Chinese Physics. B
ISSN	1674-1056
摘要	The effects of Ce-doping on the phase transition of the orbital/spin ordering (OO/SO) are studied through the structural, magnetic, and electrical transport measurements of perovskite vanadate Sm_(1-x) Ce_x VO_3. The measurements of structure show that the cell volume decreases as x≤ 0.05, and then increases as Ce-doping level increases further. The OO state exists but is suppressed progressively in the sample with x≤0.2 and disappears as x>0.2. The temperature at which the C-type SO transition is present increases monotonically with Ce-doping level increasing. The temperature dependence of resistivity for each of the samples shows a semiconducting transport behavior and the transport can be well described by the thermal activation model. The activation energy first decreases as x ≤0.2, and then increases for further doping. The obtained results are discussed in terms of the mixed-valent state of the doped-Ce ions
其他摘要	The effects of Ce-doping on the phase transition of the orbital/spin ordering (OO/SO) are studied through the structural, magnetic, and electrical transport measurements of perovskite vanadate Sm_(1-x) Ce_x VO_3. The measurements of structure show that the cell volume decreases as x≤ 0.05, and then increases as Ce-doping level increases further. The OO state exists but is suppressed progressively in the sample with x≤0.2 and disappears as x>0.2. The temperature at which the C-type SO transition is present increases monotonically with Ce-doping level increasing. The temperature dependence of resistivity for each of the samples shows a semiconducting transport behavior and the transport can be well described by the thermal activation model. The activation energy first decreases as x ≤0.2, and then increases for further doping. The obtained results are discussed in terms of the mixed-valent state of the doped-Ce ions
关键词	perovskite vanadate orbital/spin ordering electrical properties
收录类别	CSCD
语种	英语
CSCD记录号	CSCD:4862500
引用统计
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/52443
专题	中国科学院合肥物质科学研究院
作者单位	1.Institute of Solid State Physics, Chinese Academy of Sciences 2.Institute of Solid State Physics, Chinese Academy of Sciences 3.Institute of Solid State Physics, Chinese Academy of Sciences 4.Institute of Solid State Physics, Chinese Academy of Sciences 5.Institute of Solid State Physics, Chinese Academy of Sciences
推荐引用方式 GB/T 7714	Hu Xinbo,Hu Ling,Luo Xuan,et al. Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3[J]. Chinese Physics. B,2013,22.
APA	Hu Xinbo,Hu Ling,Luo Xuan,Zhao Bangchuan,&Sun Yuping.(2013).Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3.Chinese Physics. B,22.
MLA	Hu Xinbo,et al."Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χVO_3".Chinese Physics. B 22(2013).