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Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions
Jabar, Bushra1,2; Qin, Xiaoying1; Mansoor, Adil1; Ming, Hongwei1,2; Huang, LuLu1,2; Zhang, Jian1; Danish, Mazhar Hussain1,2; Li, Di1; Zhu, Chen1,2; Zhang, Jinhua1,2; Xin, Hongxing1; Song, Chunjun1
2020-09-15
Source PublicationCOMPOSITES PART B-ENGINEERING
ISSN1359-8368
Corresponding AuthorQin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian() ; Li, Di()
Abstract

Although n-type Bi2Te3-based alloys are state-of-the-art thermoelectric material, their efficiency is still too low to satisfy its wide applications. Hence, it is imperative to improve the thermoelectric performance of n-type Bi2Te2.7Se0.3 (BTS). Here, we show that through a facile method of Sn addition in BTS a new SnxBi2Te2.7Se0.3 based nanocomposite embedded with in-situ formed SnBi and Te nanoinclusions ((SnBi + Te)/SnxBi2Te2.7Se0.3) is constructed, and its thermoelectric performance is enhanced substantially as compared to pristine BTS. Specifically, addition of 0.2 wt% of Sn in BTS causes 38% increase in power factor (PF) and 40% reduction in lattice thermal conductivity. The increased PF mainly comes from elevated Seebeck coefficient due to intensified energy dependent electron scattering caused by the interface potentials; while the reduced thermal conductivity originates from enhanced phonon scattering by the embedded nanoinclusions. Consequently, both high maximum figure of merit ZT (ZT(max) = 1.11 at similar to 370 K) and large average ZT (ZT(ave) = 1.03 at T = 300 K-500 K) are achieved for this sample, which are respectively 76% and 80% higher than those of BTS studied here.

KeywordThermoelectric material Bi2Te2.7Se0.3 Sn doping Hot pressing Figure of merit
DOI10.1016/j.compositesb.2020.108151
WOS KeywordHETEROJUNCTION POTENTIALS ; BI2TE3 ; SCATTERING ; CUI
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China[11674322] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51972307]
Funding OrganizationNatural Science Foundation of China
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Multidisciplinary ; Materials Science, Composites
WOS IDWOS:000564322100002
PublisherELSEVIER SCI LTD
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/70377
Collection中国科学院合肥物质科学研究院
Corresponding AuthorQin, Xiaoying; Zhang, Jian; Li, Di
Affiliation1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
Recommended Citation
GB/T 7714
Jabar, Bushra,Qin, Xiaoying,Mansoor, Adil,et al. Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions[J]. COMPOSITES PART B-ENGINEERING,2020,197.
APA Jabar, Bushra.,Qin, Xiaoying.,Mansoor, Adil.,Ming, Hongwei.,Huang, LuLu.,...&Song, Chunjun.(2020).Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions.COMPOSITES PART B-ENGINEERING,197.
MLA Jabar, Bushra,et al."Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions".COMPOSITES PART B-ENGINEERING 197(2020).
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