Knowledge Management System of Hefei Institute of Physical Science，CAS
| Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics | |
Liu, Guozhen1,2; Zheng, Haiying3; Xu, Huifen1,3; Zhang, Liying1,2; Xu, Xiaoxiao1,2; Xu, Shendong1,2; Pan, Xu1
| |
| 2020-07-01 | |
| Source Publication | NANO ENERGY
 |
| ISSN | 2211-2855 |
| Corresponding Author | Zheng, Haiying() ; Pan, Xu(xpan@rntek.cas.cn) |
| Abstract | The voltage loss which is mainly caused by the nonradiative recombination at the interface has played a serious negative effect on the photovoltaic performance of perovskite solar cells (PSCs). Herein, we firstly designed four halogenated low-dimensional perovskite (LDP) capping layers by the way of employing different benzylammonium-based aromatic cations for high-performance devices. The introduction of halogen functional groups can not only enhance the hydrophobicity but also optimize the photovoltaic characteristics of LDP which play an important role on passivation effect of the interface between perovskite and hole transport materials (HTM) layer. The films with halogenated LDP passivation layers displayed suppressed nonradiative recombination and reduced trap density, leading to significantly reduced voltage loss. As a result, the optimal devices with 4-bromobenzylammonium-based LDP layer achieved the power conversion efficiency (PCE) as high as 21.13% with an enhanced open-circuit voltage (Voc) of 1.14 V. Under the hydrophobic and buffer action of the halogenated LDP layer, the modified devices showed outstanding long-term stability when exposed to moisture, heat and continuous UV irradiation. This work proves the enhanced passivation effect of LDP layer by regulating the chemical property of introduced organic cations for high-performance and stable perovskite photovoltaics. |
| Keyword | Perovskite solar cells Low-dimensional perovskite Passivation effect Halogenated cations Photovoltaic performance |
| DOI | 10.1016/j.nanoen.2020.104753 |
| WOS Keyword | HIGH-EFFICIENCY ; SOLAR-CELLS ; HYBRID PEROVSKITES ; HALIDE PEROVSKITES ; IODIDE ; ABSORBER ; DESIGN ; FILMS |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[2016YFA0202401] ; Colleges and Universities in Shandong Province Science and Technology Projects[J17KA097] |
| Funding Organization | National Key Research and Development Program of China ; Colleges and Universities in Shandong Province Science and Technology Projects |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000560077400012 |
| Publisher | ELSEVIER |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.hfcas.ac.cn:8080/handle/334002/92837 |
| Collection | 中国科学院合肥物质科学研究院 |
| Corresponding Author | Zheng, Haiying; Pan, Xu |
| Affiliation | 1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, Guozhen,Zheng, Haiying,Xu, Huifen,et al. Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics[J]. NANO ENERGY,2020,73. |
| APA | Liu, Guozhen.,Zheng, Haiying.,Xu, Huifen.,Zhang, Liying.,Xu, Xiaoxiao.,...&Pan, Xu.(2020).Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics.NANO ENERGY,73. |
| MLA | Liu, Guozhen,et al."Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics".NANO ENERGY 73(2020). |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment