Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping

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	Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping
其他题名	Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping
	Zou Tianhua 1; Xie Wenjie 1; Widenmeyer Marc 1; Xiao Xingxing 1; Qin Xiaoyin 2; Weidenkaff Anke 1
	2018
发表期刊	稀有金属：英文版
ISSN	1001-0521
摘要	Doping- and alloying-induced point defects lead to mass and strain field fluctuations which can be used as effective strategies to decrease the lattice thermal conductivity and consequently boost the performance of thermoelectric materials. Herein, we report the effects of Sm and S co-doping on thermoelectric transport properties of copper antimony selenides in the temperature range of 300 K 〈 T〈 650 K. Through the Callaway model, it demonstrates that Sm and S co-doping induces strong mass differences and strain field fluctuations in Cu3SbSe4. The results prove that doping with suitable elements can increase point defect scattering of heat-carrying phonons, leading to a lower thermal conductivity and a better ther- moelectric performance. The highest figure of merit （ZT） of - 0.55 at 648 K is obtained for the Sm and S co-doped sample with nominal composition of Cu2.995Sm0.005Sb- Se3.95S0.05, which is about 55% increase compared to the ZT of pristine Cu3SbSe4.
其他摘要	Doping- and alloying-induced point defects lead to mass and strain field fluctuations which can be used as effective strategies to decrease the lattice thermal conductivity and consequently boost the performance of thermoelectric materials. Herein, we report the effects of Sm and S co-doping on thermoelectric transport properties of copper antimony selenides in the temperature range of 300 K 〈 T〈 650 K. Through the Callaway model, it demonstrates that Sm and S co-doping induces strong mass differences and strain field fluctuations in Cu3SbSe4. The results prove that doping with suitable elements can increase point defect scattering of heat-carrying phonons, leading to a lower thermal conductivity and a better ther- moelectric performance. The highest figure of merit （ZT） of - 0.55 at 648 K is obtained for the Sm and S co-doped sample with nominal composition of Cu2.995Sm0.005Sb- Se3.95S0.05, which is about 55% increase compared to the ZT of pristine Cu3SbSe4.
关键词	硒化物 Sm 散布锑铜温度范围热传导性热电
收录类别	CSCD
语种	中文
CSCD记录号	CSCD:6218434
引用统计	被引频次：2[CSCD] [CSCD记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/93829
专题	中国科学院合肥物质科学研究院
作者单位	1.Institute for Materials Science, University of Stuttgart 2.Institute for Materials Science, University of Stuttgart 3.Institute for Materials Science, University of Stuttgart 4.Institute for Materials Science, University of Stuttgart 5.Institute of Solid State Physics, Chinese Academy of Sciences 6.Institute for Materials Science, University of Stuttgart
推荐引用方式 GB/T 7714	Zou Tianhua,Xie Wenjie,Widenmeyer Marc,et al. Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping[J]. 稀有金属：英文版,2018,037.
APA	Zou Tianhua,Xie Wenjie,Widenmeyer Marc,Xiao Xingxing,Qin Xiaoyin,&Weidenkaff Anke.(2018).Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping.稀有金属：英文版,037.
MLA	Zou Tianhua,et al."Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping".稀有金属：英文版 037(2018).