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Biological calcium phosphate nanorods for piezocatalytical extraction of U(VI) from water 期刊论文
NANO RESEARCH, 2023
作者:  Gao, Feixue;  Wang, Zhe;  Fang, Ming;  Tan, Xiaoli;  Xu, Shao Hui;  Liu, Mao;  Fei, Guang Tao;  Zhang, Li De
收藏  |  浏览/下载：26/0  |  提交时间：2023/11/17
nanorods  uranium  piezocatalysis  calcium phosphate  H2O2  
Au@SiO2 hybridized Ca2B2O5 center dot H2O:Tb3+ nano belts: An insight on the enhanced photoluminescence by Au nanoparticles 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 784, 期号: 无, 页码: 354-361
作者:  Wang, Peng;  Zhu, Mingyu;  Cai, Yawen;  Fang, Ming;  Kong, Mingguang;  Xu, Wei;  Tan, Xiaoli;  Liu, Mao;  Wang, Xiangke
浏览  |  Adobe PDF(2382Kb)  |  收藏  |  浏览/下载：4073/0  |  提交时间：2020/07/14
Metal enhanced fluorescence  SPR  Nanomaterials  Borate  Photoluminescence  
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
浏览  |  Adobe PDF(3018Kb)  |  收藏  |  浏览/下载：797/665  |  提交时间：2020/03/31
Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics  
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
浏览  |  Adobe PDF(2151Kb)  |  收藏  |  浏览/下载：92/48  |  提交时间：2019/06/10
electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors  
Ca2B2O5 center dot H2O:Tb3+ hierarchical micro-nanostructures: formation and optical properties 期刊论文
CRYSTENGCOMM, 2017, 卷号: 19, 期号: 40, 页码: 5973-5981
作者:  Wang, Peng;  Fang, Ming;  Liu, Mao;  Kong, Mingguang;  Xu, Wei;  Zhang, Lide
浏览  |  Adobe PDF(4165Kb)  |  收藏  |  浏览/下载：100/30  |  提交时间：2018/08/17
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：130/74  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
收藏  |  浏览/下载：65/0  |  提交时间：2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：140/71  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：143/90  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.;  Sun, Z. Q.
浏览  |  Adobe PDF(1973Kb)  |  收藏  |  浏览/下载：128/54  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism