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Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：143/90  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.;  Sun, Z. Q.
浏览  |  Adobe PDF(1973Kb)  |  收藏  |  浏览/下载：128/54  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism  
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Zhang, M.;  Liu, Y. M.;  Lv, J. G.;  Sun, Z. Q.
浏览  |  Adobe PDF(2286Kb)  |  收藏  |  浏览/下载：134/71  |  提交时间：2017/10/18
High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms  
Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932
作者:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Chen, H. S.;  Chen, X. S.;  Sun, Z. Q.;  Zhang, M.;  Lv, J. G.;  Liu, Y. M.
浏览  |  Adobe PDF(2590Kb)  |  收藏  |  浏览/下载：108/44  |  提交时间：2017/09/11
High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties  
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：108/40  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation