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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：130/74  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
收藏  |  浏览/下载：65/0  |  提交时间：2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：140/71  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Stability of Ar(H-2)(2) to 358 GPa 期刊论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2017, 卷号: 114, 期号: 14, 页码: 3596-3600
作者:  Ji, Cheng;  Goncharov, Alexander F.;  Shukla, Vivekanand;  Jena, Naresh K.;  Popov, Dmitry;  Li, Bing;  Wang, Junyue;  Meng, Yue;  Prakapenka, Vitali B.;  Smith, Jesse S.;  Ahuja, Rajeev;  Yang, Wenge;  Mao, Ho-Kwang
浏览  |  Adobe PDF(1134Kb)  |  收藏  |  浏览/下载：145/50  |  提交时间：2018/07/04
Ultrahigh Pressure  Hydrogen-rich Compound  Intermolecular Interaction  Metallization  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：143/90  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.;  Zhang, M.
浏览  |  Adobe PDF(972Kb)  |  收藏  |  浏览/下载：115/56  |  提交时间：2018/07/04
High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism