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Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：111/41  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation  
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7
作者:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang;  Liu, Mao
浏览  |  Adobe PDF(4026Kb)  |  收藏  |  浏览/下载：113/51  |  提交时间：2017/09/15
Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation 期刊论文
J. Mater. Chem. C, 2014, 卷号: 2, 期号: 27, 页码: 5299-5308
作者:  Gang He;  Jiangwei Liu;  Hanshuang Chen;  Yanmei Liu;  Zhaoqi Sun;  Xiaoshuang Chen;  Mao Liu;  Lide Zhang
Adobe PDF(1191Kb)  |  收藏  |  浏览/下载：69/52  |  提交时间：2016/07/12