中文版 | English

在结果中检索

HFCAS OpenIR

浏览/检索结果: 共1条，第1-1条 帮助

已选(0)清除 条数/页：   排序方式：
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：108/40  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation