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HFCAS OpenIR

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An efficient nanocluster catalyst for Sonogashira reaction 期刊论文
JOURNAL OF CATALYSIS, 2021, 卷号: 401
作者:  Yang, Ying;  Chen, Cheng;  Xu, Guo-Yong;  Yuan, Jinyun;  Ye, Sun-Feng;  Chen, Li;  Lv, Qi-Long;  Luo, Gen;  Yang, Jinlong;  Li, Man-Bo;  Wu, Zhikun
收藏  |  浏览/下载：51/0  |  提交时间：2021/11/01
Atomically precise nanoclusters  Sonogashira reaction  Incorporation  Activity and selectivity  Recyclability  
N and Sn Co-Doped hematite photoanodes for efficient solar water oxidation 期刊论文
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2021, 卷号: 585
作者:  Jiao, Tinting;  Lu, Cheng;  Feng, Kun;  Deng, Jiujun;  Long, Dan;  Zhong, Jun
收藏  |  浏览/下载：51/0  |  提交时间：2021/03/15
Hematite  Photoelectrochemical reaction  Water splitting  Sn-doping  N-incorporation  
A comparative study of the R-P phase Srn+1FenO3n+1 (n=1, 2 and 3) cathodes for intermediate temperature solid oxide fuel cells 期刊论文
CERAMICS INTERNATIONAL, 2020, 卷号: 46
作者:  Dong, Kuan;  Hou, Jie;  Miao, Lina;  Jin, Zongzi;  Wang, Di;  Teng, Yue;  Liu, Wei
收藏  |  浏览/下载：66/0  |  提交时间：2020/11/26
Proton-conducting SOFCs  Ruddlesden-Popper  Electrical conductivity  Oxygen incorporation kinetics  Average valence state  
Retention of U(VI) by the Formation of Fe Precipitates from Oxidation of Fe(II) 期刊论文
ACS EARTH AND SPACE CHEMISTRY, 2018, 卷号: 2, 期号: 10, 页码: 968-976
作者:  Mei, Huiyang;  Tan, Xiaoli;  Tan, Liqiang;  Meng, Yuedong;  Chen, Changlun;  Fang, Ming;  Wang, Xiangke
收藏  |  浏览/下载：29/0  |  提交时间：2019/12/25
U(VI)  Fe(II)  Fe precipitate  oxidation  incorporation  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：142/90  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Zhang, M.;  Liu, Y. M.;  Lv, J. G.;  Sun, Z. Q.
浏览  |  Adobe PDF(2286Kb)  |  收藏  |  浏览/下载：134/71  |  提交时间：2017/10/18
High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms  
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：108/40  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation