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HFCAS OpenIR

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Experimental study of high-k turbulence during an energy confinement degradation phase in EAST ohmic plasmas 期刊论文
NUCLEAR FUSION, 2020, 卷号: 60
作者:  Sun, P. J.;  Li, Y. D.;  Ren, Y.;  Zhang, X. D.;  Wu, G. J.;  Wang, Y. M.;  Liu, Y.;  Zhou, T. F.;  Gu, X.;  Yuan, X. Q.;  Zang, Q.;  Li, P.;  Chen, Y. J.;  Duan, Y. M.;  Mao, S. T.;  Zhang, B.;  Shi, T. H.;  Liu, H. Q.;  Lyu, B.;  Hu, L. Q.;  Li, J. G.
收藏  |  浏览/下载：55/0  |  提交时间：2020/11/26
turbulence  high-k  transport  EAST tokamak  energy confinement  
Low temperature magnetism in the rare-earth perovskite GdScO3* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29
作者:  Sheng, Jie-Ming;  Kan, Xu-Cai;  Ge, Han;  Yuan, Pei-Qian;  Zhang, Lei;  Zhao, Nan;  Song, Zong-Mei;  Yao, Yuan-Yin;  Tang, Ji-Ning;  Wang, Shan-Min;  Tian, Ming-Liang;  Tong, Xin;  Wu, Liu-Suo
收藏  |  浏览/下载：34/0  |  提交时间：2020/10/26
HIGH-K DIELECTRICS  NEUTRON-DIFFRACTION  FERROELECTRICITY  rare-earth perovskite  magnetization  spin-flop transition  quantum critical point  
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
浏览  |  Adobe PDF(3018Kb)  |  收藏  |  浏览/下载：798/665  |  提交时间：2020/03/31
Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics  
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
浏览  |  Adobe PDF(2151Kb)  |  收藏  |  浏览/下载：94/49  |  提交时间：2019/06/10
electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors  
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：133/76  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：144/73  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：147/92  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.;  Sun, Z. Q.
浏览  |  Adobe PDF(1973Kb)  |  收藏  |  浏览/下载：132/55  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism  
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.;  Zhang, M.
浏览  |  Adobe PDF(972Kb)  |  收藏  |  浏览/下载：118/56  |  提交时间：2018/07/04
High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism  
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.;  Zheng, C. Y.;  Jin, P.;  Xiao, D. Q.;  Chen, X. S.
浏览  |  Adobe PDF(3497Kb)  |  收藏  |  浏览/下载：162/101  |  提交时间：2017/11/21
High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism