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Structural stability and electronic properties of the (0001) inversion domain boundary in III-nitrides 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 154, 页码: 152-158
Authors:  Li, Siqian;  Lei, Huaping;  Anglade, Pierre-Matthieu;  Chen, Jun;  Ruterana, Pierre
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Inversion domain boundary (IDB)  Group III-nitrides  DFT  Chemical bonding  Electronic structure  
Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 43, 页码: 37651-37660
Authors:  Li, Siqian;  Lei, Huaping;  Wang, Yi;  Ullah, Md Barkat;  Chen, Jun;  Avrutin, Vitaliy;  Ozgur, Umit;  Morkoc, Hadis;  Ruterana, Pierre
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ZnO/GaN heterointerface  (0001) plane IDBs  polarity control  energetic stability  2DHG  2DEG  
基于 InAs/GaSb 的二类、断带半导体量子阱材料中光电特性的理论研究 学位论文
, 北京: 中国科学院研究生院, 2008
Authors:  魏相飞
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Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems 期刊论文
Physica E, 2008, 期号: 40
Authors:  W. Xua;  P.A. Folkes
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自旋电子系统光电特性的理论研究 学位论文
, 北京: 中国科学院研究生院, 2007
Authors:  杨翠红
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Sub-terahertz photoconduction induced by interlayer transition in an InAs/GaSb-based type II and broken-gap quantum well system 期刊论文
JOURNAL OF PHYSICS: CONDENSED MATTER, 2007, 期号: 19
Authors:  X FWei;  W Xu;  Z Zeng
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Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 期号: 102
Authors:  W. Xu;  P. A. Folkes;  Godfrey Gumbs
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Photocurrent induced by intersubband transition in a type II and broken-gap quantum well system 期刊论文
phys. stat. sol., 2007, 期号: 4
Authors:  X. F.Wei;  W. Xu;  Z. Zeng;  C. Zhang
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Two color plasmon excitation in an electron-hole bilayer structure controlled by the spin-orbit interaction 期刊论文
APPLIED PHYSICS LETTERS, 2006, 期号: 88
Authors:  C. H. Yang;  A. Wright;  F. Gao;  C. Zhang;  Z. Zeng
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Optical spectrum of a two-dimensional hole gas in the presence of spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2006, 期号: 74
Authors:  C. H. Yang;  W. Xu;  Z. Zeng;  F. Lu;  C. Zhang
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