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Ultrathin GaGeTe p-type transistors 期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 111, 期号: 20, 页码: 3
作者:  Wang, Weike;  Li, Liang;  Zhang, Zhitao;  Yang, Jiyong;  Tang, Dongsheng;  Zhai, Tianyou
浏览  |  Adobe PDF(1215Kb)  |  收藏  |  浏览/下载：69/30  |  提交时间：2019/06/17
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：119/70  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
收藏  |  浏览/下载：56/0  |  提交时间：2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Non-covalent poly (2-ethylhexyl acrylate) (P2EHA)/functionalized graphene/h-boron nitride flexible composites with enhanced adhesive and thermal conductivity by a facilitated latex approach 期刊论文
COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING, 2017, 卷号: 99, 期号: 无, 页码: 176-185
作者:  Su, Zheng;  Wang, Hua;  Ye, Xianzhu;  Tian, Konghu;  Huang, Weiqi;  Guo, Yulan;  He, Jing;  Tian, Xingyou
浏览  |  Adobe PDF(3659Kb)  |  收藏  |  浏览/下载：114/41  |  提交时间：2018/06/04
Graphene  Polymer-matrix Composites (Pmcs)  Anisotropy  Thermal Properties  
The tunable plasma synthesis of Pt-reduced graphene oxide nanocomposites 期刊论文
AIP ADVANCES, 2017, 卷号: 7, 期号: 6, 页码: 1-8
作者:  Ma, Yulong;  Fang, Shidong;  Wang, Qi
浏览  |  Adobe PDF(5721Kb)  |  收藏  |  浏览/下载：156/101  |  提交时间：2018/06/04
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：126/64  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures 期刊论文
APL MATERIALS, 2017, 卷号: 5, 期号: 5, 页码: 1-7
作者:  Dong, Yongqi;  Xu, Haoran;  Luo, Zhenlin;  Zhou, Hua;  Fong, Dillon D.;  Wu, Wenbin;  Gao, Chen
浏览  |  Adobe PDF(3796Kb)  |  收藏  |  浏览/下载：87/50  |  提交时间：2018/05/25
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：132/86  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Electronic and transport properties of n-type monolayer black phosphorus at low temperatures 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 11, 页码: 1-8
作者:  Han, F. W.;  Xu, W.;  Li, L. L.;  Zhang, C.;  Dong, H. M.;  Peeters, F. M.
浏览  |  Adobe PDF(328Kb)  |  收藏  |  浏览/下载：95/55  |  提交时间：2018/07/04
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.;  Sun, Z. Q.
浏览  |  Adobe PDF(1973Kb)  |  收藏  |  浏览/下载：116/52  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism