中文版 | English

在结果中检索

HFCAS OpenIR

浏览/检索结果: 共56条，第1-10条 帮助

限定条件                    
已选(0)清除 条数/页：   排序方式：
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
浏览  |  Adobe PDF(3018Kb)  |  收藏  |  浏览/下载：793/663  |  提交时间：2020/03/31
Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics  
Electric-field modulation of linear dichroism and Faraday rotation in few-layer phosphorene 期刊论文
2D MATERIALS, 2019, 卷号: 6, 期号: 1, 页码: 12
作者:  Li, L. L.;  Partoens, B.;  Xu, W.;  Peeters, F. M.
浏览  |  Adobe PDF(3244Kb)  |  收藏  |  浏览/下载：53/26  |  提交时间：2020/03/31
few-layer phosphorene  optical conductivity  linear dichroism  Faraday rotation  tight-binding method  self-consistent calculation  
Electronic and optical properties of single-layer MoS2 期刊论文
FRONTIERS OF PHYSICS, 2018, 卷号: 13, 期号: 4, 页码: 6
作者:  Dong, Hai-Ming;  Guo, San-Dong;  Duan, Yi-Feng;  Huang, Fei;  Xu, Wen;  Zhang, Jin
浏览  |  Adobe PDF(364Kb)  |  收藏  |  浏览/下载：64/29  |  提交时间：2020/03/31
MoS2  electronic and optical properties  
Use of model-based library in critical dimension measurement by CD-SEM 期刊论文
MEASUREMENT, 2018, 卷号: 123, 期号: 无, 页码: 150-162
作者:  Zou, Y. B.;  Khan, M. S. S.;  Li, H. M.;  Li, Y. G.;  Li, W.;  Gao, S. T.;  Liu, L. S.;  Ding, Z. J.
浏览  |  Adobe PDF(2078Kb)  |  收藏  |  浏览/下载：76/38  |  提交时间：2019/08/26
Model-based library  Critical dimension  Secondary electron  CD-SEM  Monte Carlo simulation  
Porous AAO template-assisted rational synthesis of large-scale 1D hybrid and hierarchically branched nanoarchitectures 期刊论文
PROGRESS IN MATERIALS SCIENCE, 2018, 卷号: 95, 期号: 无, 页码: 243-285
作者:  Xu, Qiaoling;  Meng, Guowen;  Han, Fangming
浏览  |  Adobe PDF(12940Kb)  |  收藏  |  浏览/下载：108/39  |  提交时间：2019/08/23
Hybrid nanostructures  Branched nanostructures  Anodic aluminum oxide  Template-assisted synthesis  
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
浏览  |  Adobe PDF(2151Kb)  |  收藏  |  浏览/下载：82/45  |  提交时间：2019/06/10
electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors  
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：122/71  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
收藏  |  浏览/下载：57/0  |  提交时间：2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：129/65  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：134/86  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel