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Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
Authors:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
View  |  Adobe PDF(3018Kb)  |  Favorite  |  View/Download:295/287  |  Submit date:2020/03/31
Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics  
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
Authors:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
View  |  Adobe PDF(2151Kb)  |  Favorite  |  View/Download:13/3  |  Submit date:2019/06/10
electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors