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Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao;  Ma, Rui;  Sun, Zhaoqi
浏览  |  Adobe PDF(607Kb)  |  收藏  |  浏览/下载：108/49  |  提交时间：2017/11/21
High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism  
Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 10, 页码: 11640-11649
作者:  Jiang, S. S.;  He, G.;  Gao, J.;  Xiao, D. Q.;  Jin, P.;  Li, W. D.;  Lv, J. G.;  Liu, M.;  Liu, Y. M.;  Sun, Z. Q.
浏览  |  Adobe PDF(2548Kb)  |  收藏  |  浏览/下载：89/39  |  提交时间：2017/10/18
Electrical Properties  High-k Gate Dielectrics  Metal-oxide-semiconductor  Conduction Mechanisms  Sputtering  
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7
作者:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang;  Liu, Mao
浏览  |  Adobe PDF(4026Kb)  |  收藏  |  浏览/下载：102/51  |  提交时间：2017/09/15