HFCAS OpenIR

Browse/Search Results:  1-10 of 10 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
View  |  Adobe PDF(1886Kb)  |  Favorite  |  View/Download:16/6  |  Submit date:2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
Authors:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
Favorite  |  View/Download:7/0  |  Submit date:2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
Authors:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
View  |  Adobe PDF(3293Kb)  |  Favorite  |  View/Download:45/20  |  Submit date:2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
Authors:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
View  |  Adobe PDF(2130Kb)  |  Favorite  |  View/Download:39/31  |  Submit date:2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
Authors:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Zhang, M.;  Liu, Y. M.;  Lv, J. G.;  Sun, Z. Q.
View  |  Adobe PDF(2286Kb)  |  Favorite  |  View/Download:35/22  |  Submit date:2017/10/18
High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms  
Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932
Authors:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Chen, H. S.;  Chen, X. S.;  Sun, Z. Q.;  Zhang, M.;  Lv, J. G.;  Liu, Y. M.
View  |  Adobe PDF(2590Kb)  |  Favorite  |  View/Download:19/4  |  Submit date:2017/09/11
High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties  
Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 期号: 无, 页码: 115-121
Authors:  Zheng, C. Y.;  He, G.;  Chen, X. F.;  Liu, M.;  Lv, J. G.;  Gao, J.;  Zhang, J. W.;  Xiao, D. Q.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
View  |  Adobe PDF(1859Kb)  |  Favorite  |  View/Download:29/11  |  Submit date:2017/10/18
Band Offset  Hfo2/ingazno4 Heterojunctions  X-ray Photoelectron Spectroscopy  Thin Film Transistors  Electrical Properties  Mos Capacitor  
Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 10, 页码: 11640-11649
Authors:  Jiang, S. S.;  He, G.;  Gao, J.;  Xiao, D. Q.;  Jin, P.;  Li, W. D.;  Lv, J. G.;  Liu, M.;  Liu, Y. M.;  Sun, Z. Q.
View  |  Adobe PDF(2548Kb)  |  Favorite  |  View/Download:8/1  |  Submit date:2017/10/18
Electrical Properties  High-k Gate Dielectrics  Metal-oxide-semiconductor  Conduction Mechanisms  Sputtering  
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
Authors:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao;  Ma, Rui;  Sun, Zhaoqi
View  |  Adobe PDF(607Kb)  |  Favorite  |  View/Download:27/5  |  Submit date:2017/11/21
High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism  
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7
Authors:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang;  Liu, Mao
View  |  Adobe PDF(4026Kb)  |  Favorite  |  View/Download:13/7  |  Submit date:2017/09/15