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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
浏览  |  Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：121/71  |  提交时间：2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
收藏  |  浏览/下载：57/0  |  提交时间：2018/08/16
Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：134/86  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.;  Zhang, M.
浏览  |  Adobe PDF(972Kb)  |  收藏  |  浏览/下载：107/56  |  提交时间：2018/07/04
High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism  
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Zhang, M.;  Liu, Y. M.;  Lv, J. G.;  Sun, Z. Q.
浏览  |  Adobe PDF(2286Kb)  |  收藏  |  浏览/下载：127/69  |  提交时间：2017/10/18
High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms  
Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932
作者:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Chen, H. S.;  Chen, X. S.;  Sun, Z. Q.;  Zhang, M.;  Lv, J. G.;  Liu, Y. M.
浏览  |  Adobe PDF(2590Kb)  |  收藏  |  浏览/下载：98/42  |  提交时间：2017/09/11
High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties  
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：103/38  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation  
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao;  Lv, Jianguo;  Liu, Yanmei;  Zhang, Miao;  Wang, Peihong;  Sun, Zhaoqi
浏览  |  Adobe PDF(2394Kb)  |  收藏  |  浏览/下载：141/66  |  提交时间：2017/10/18
High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties  
Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662, 期号: 无, 页码: 339-347
作者:  Gao, J.;  He, G.;  Deng, B.;  Xiao, D. Q.;  Liu, M.;  Jin, P.;  Zheng, C. Y.;  Sun, Z. Q.
浏览  |  Adobe PDF(3787Kb)  |  收藏  |  浏览/下载：62/35  |  提交时间：2017/10/18
Hfo2 Thin Films  Rf Sputtering  Optical Properties  Band Gap  Wettability