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Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7, 页码: 1-9
作者:  Dai Yue-Hua;  Pan Zhi-Yong;  Chen Zhen;  Wang Fei-Fei;  Li Ning;  Jin Bo;  Li Xiao-Feng
浏览  |  Adobe PDF(758Kb)  |  收藏  |  浏览/下载:91/31  |  提交时间:2017/11/21
Resistive Random Access Memory  Ag Concentration  Ag Orientation  First-principles