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Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.;  Zheng, C. Y.;  Jin, P.;  Xiao, D. Q.;  Chen, X. S.
浏览  |  Adobe PDF(3497Kb)  |  收藏  |  浏览/下载：155/98  |  提交时间：2017/11/21
High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism  
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Zhang, M.;  Liu, Y. M.;  Lv, J. G.;  Sun, Z. Q.
浏览  |  Adobe PDF(2286Kb)  |  收藏  |  浏览/下载：125/69  |  提交时间：2017/10/18
High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms  
Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932
作者:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Chen, H. S.;  Chen, X. S.;  Sun, Z. Q.;  Zhang, M.;  Lv, J. G.;  Liu, Y. M.
浏览  |  Adobe PDF(2590Kb)  |  收藏  |  浏览/下载：94/40  |  提交时间：2017/09/11
High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties  
Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 期号: 无, 页码: 115-121
作者:  Zheng, C. Y.;  He, G.;  Chen, X. F.;  Liu, M.;  Lv, J. G.;  Gao, J.;  Zhang, J. W.;  Xiao, D. Q.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(1859Kb)  |  收藏  |  浏览/下载：112/54  |  提交时间：2017/10/18
Band Offset  Hfo2/ingazno4 Heterojunctions  X-ray Photoelectron Spectroscopy  Thin Film Transistors  Electrical Properties  Mos Capacitor  
Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 10, 页码: 11640-11649
作者:  Jiang, S. S.;  He, G.;  Gao, J.;  Xiao, D. Q.;  Jin, P.;  Li, W. D.;  Lv, J. G.;  Liu, M.;  Liu, Y. M.;  Sun, Z. Q.
浏览  |  Adobe PDF(2548Kb)  |  收藏  |  浏览/下载：88/39  |  提交时间：2017/10/18
Electrical Properties  High-k Gate Dielectrics  Metal-oxide-semiconductor  Conduction Mechanisms  Sputtering  
Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662, 期号: 无, 页码: 339-347
作者:  Gao, J.;  He, G.;  Deng, B.;  Xiao, D. Q.;  Liu, M.;  Jin, P.;  Zheng, C. Y.;  Sun, Z. Q.
浏览  |  Adobe PDF(3787Kb)  |  收藏  |  浏览/下载：60/35  |  提交时间：2017/10/18
Hfo2 Thin Films  Rf Sputtering  Optical Properties  Band Gap  Wettability