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Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
浏览  |  Adobe PDF(2273Kb)  |  收藏  |  浏览/下载：103/38  |  提交时间：2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation  
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao;  Lv, Jianguo;  Liu, Yanmei;  Zhang, Miao;  Wang, Peihong;  Sun, Zhaoqi
浏览  |  Adobe PDF(2394Kb)  |  收藏  |  浏览/下载：141/66  |  提交时间：2017/10/18
High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties