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Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
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electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors