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Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 页码: 579-587
Authors:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
Favorite  |  View/Download:0/0  |  Submit date:2020/03/31
Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics  
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
View  |  Adobe PDF(1886Kb)  |  Favorite  |  View/Download:10/2  |  Submit date:2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature