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Observation of toroidal Alfven eigenmode excited by energetic electrons induced by static magnetic perturbations in the EAST tokamak 期刊论文
NUCLEAR FUSION, 2018, 卷号: 58, 期号: 10, 页码: 5
Authors:  Chu, N.;  Sun, Y.;  Gu, S.;  Wang, H. H.;  Hu, Y. J.;  Shi, T. H.;  Chen, D. L.;  Gu, X.;  He, K. Y.;  Jia, M.;  Lin, S. Y.;  Liu, H. Q.;  Qian, J. P.;  Ren, J.;  Shen, B.;  Ti, A.;  Wang, S. X.;  Xie, J. L.;  Xu, M.;  Xue, M. M.;  Yan, N.;  Zang, Q.;  Zeng, L.;  Zhang, J. Z.;  Zhang, T.;  Zhang, Y.;  Zhong, G. Q.;  Zhou, C.;  Zhou, R. J.
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magnetic perturbation  toroidal Alfven eignenmode  reconnection  magnetic island  energetic electron  
Four-dimensional calibration turntable of the motional Stark effect diagnostic on EAST 期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2018, 卷号: 89, 期号: 10, 页码: 5
Authors:  Huang, X.;  Liu, D. M.;  Liu, C.;  Fu, J.;  Wan, B. N.;  Lyu, B.;  Wu, Z. W.;  Holcomb, C. T.;  Ko, J.;  Rowan, W. L.;  Huang, H.;  Miao, G. Z.
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Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682
Authors:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.;  Liang, S.;  Li, W. D.
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Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties  
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
Authors:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
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High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
Authors:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
View  |  Adobe PDF(2130Kb)  |  Favorite  |  View/Download：39/31  |  Submit date：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel  
Edge localized mode control using n=1 resonant magnetic perturbation in the EAST tokamak 期刊论文
NUCLEAR FUSION, 2017, 卷号: 57, 期号: 3, 页码: 1-10
Authors:  Sun, Y.;  Jia, M.;  Zang, Q.;  Wang, L.;  Liang, Y.;  Liu, Y. Q.;  Yang, X.;  Guo, W.;  Gu, S.;  Li, Y.;  Lyu, B.;  Zhao, H.;  Liu, Y.;  Zhang, T.;  Li, G.;  Qian, J.;  Xu, L.;  Chu, N.;  Wang, H. H.;  Shi, T.;  He, K.;  Chen, D.;  Shen, B.;  Gong, X.;  Ji, X.;  Wang, S.;  Qi, M.;  Yuan, Q.;  Sheng, Z.;  Gao, G.;  Song, Y.;  Fu, P.;  Wan, B.;  EAST Contributors
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Resonant Magnetic Perturbation  Elm Control  Edge Stochasticity  Tokamak  
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
Authors:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.;  Sun, Z. Q.
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High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism  
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
Authors:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q.;  Gao, J.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.;  Zhang, M.
View  |  Adobe PDF(972Kb)  |  Favorite  |  View/Download：29/19  |  Submit date：2018/07/04
High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism  
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
Authors:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.;  Zheng, C. Y.;  Jin, P.;  Xiao, D. Q.;  Chen, X. S.
View  |  Adobe PDF(3497Kb)  |  Favorite  |  View/Download：61/45  |  Submit date：2017/11/21
High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism  
一种用于多台大功率变流器串联运行的退出方法 专利
专利类型: 发明专利, 专利号: 201610066272.0, 申请日期: 2017-01-01,
Inventors:  黄连生;  陈晓娇;  傅鹏;  高格;  何诗英;  王泽京
Adobe PDF(477Kb)  |  Favorite  |  View/Download：7/0  |  Submit date：2018/10/18