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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
View  |  Adobe PDF(1886Kb)  |  Favorite  |  View/Download:10/2  |  Submit date:2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
Authors:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.;  Zheng, C. Y.;  Jin, P.;  Xiao, D. Q.;  Chen, X. S.
View  |  Adobe PDF(3497Kb)  |  Favorite  |  View/Download:46/32  |  Submit date:2017/11/21
High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism