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Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method 期刊论文
MATERIALS, 2020, 卷号: 13
Authors:  Li, Jingwei;  Li, Juncheng;  Lin, Yinhe;  Shi, Jian;  Ban, Boyuan;  Liu, Guicheng;  Yang, Woochul;  Chen, Jian
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modified Czochralski method  refined Si separation  Al-Si alloy  boron and phosphorus removals  distribution mechanism  
Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method 期刊论文
Materials, 2020
Authors:  Jingwei, Li;  Juncheng, Li;  Yinhe, Lin;  Jian, Shi;  Boyuan ,Ban;  Guicheng, Liu;  Woochul Yang;  Jian Chen
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Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method 期刊论文
Materials, 2020
Authors:  Jingwei Li;  Juncheng Li;  Yinhe Lin;  Jian Shi;  , Boyuan Ban;  Guicheng Liu;  Woochul Yang;  Jian Chen
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钼酸镧(la*mo*o*)基中温离子导体材料及其制备方法 专利
专利类型: 发明, 专利号: cn1962460, 申请日期: 2007-01-01, 公开日期: 2009-11-09, 2009-11-09
Inventors:  王建新;  方前锋;  王先平;  梁付君;  李春;  庄重;  李丹;  刘庆;  程帜军;  张国光
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氧离子导体La1.95K0.05Mo2-xMnxO9-δ的内耗研究 期刊论文
物理学进展, 2006, 期号: 3和4
Authors:  李春;  张国光;  程帜军;  王先平;  方前锋
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氧离子导体La1[1].95K0.05Mo2-xMnxO9-δ的内耗研究 期刊论文
物理学进展, 2006, 期号: 3和4
Authors:  李春;  张国光;  程帜军;  王先平;  方前锋
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氧离子导体La_(1.95)K_(0.05)Mo_(2-χ)Mn_χ O_(9-δ)的内耗研究 期刊论文
物理学进展, 2006, 卷号: 26
Authors:  李春;  张国光;  程帜军;  王先平;  方前锋
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氧离子导体  内耗  氧扩散激活能  相变  
一种具有大长径比通孔的蜂窝状钨基金属陶瓷的加工方法 专利
专利类型: 发明专利, 专利号: 202011096735.0,
Inventors:  张临超;  刘瑞;  李刚;  谢卓明;  杨俊峰;  谢雪峰;  张瑞谦;  吴学邦;  王先平;  方前锋;  刘长松;  程帜军
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一种钨基金属陶瓷核燃料芯块及其制备方法 专利
专利类型: 发明专利, 专利号: 202011128428.6,
Inventors:  张临超;  刘瑞;  李刚;  谢卓明;  杨俊峰;  谢雪峰;  张瑞谦;  吴学邦;  王先平;  方前锋;  刘长松;  程帜军
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