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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
View  |  Adobe PDF(1886Kb)  |  Favorite  |  View/Download:10/2  |  Submit date:2018/05/25
High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
A strain-induced new phase diagram and unusually high Curie temperature in manganites 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 31, 页码: 7813-7819
Authors:  Kou, Yunfang;  Miao, Tian;  Wang, Hui;  Xie, Lin;  Wang, Yanmei;  Lin, Hanxuan;  Wang, Shasha;  Liu, Hao;  Bai, Yu;  Zhu, Yinyan;  Shao, Jian;  Cai, Peng;  Wang, Wenbin;  Du, Haifeng;  Pan, Xiaoqing;  Wu, Ruqian;  Yin, Lifeng;  Shen, Jian
Favorite  |  View/Download:8/0  |  Submit date:2018/08/16
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
Authors:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao;  Lv, Jianguo;  Liu, Yanmei;  Zhang, Miao;  Wang, Peihong;  Sun, Zhaoqi
View  |  Adobe PDF(2394Kb)  |  Favorite  |  View/Download:44/9  |  Submit date:2017/10/18
High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties  
Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation 期刊论文
J. Mater. Chem. C, 2014, 卷号: 2, 期号: 27, 页码: 5299-5308
Authors:  Gang He;  Jiangwei Liu;  Hanshuang Chen;  Yanmei Liu;  Zhaoqi Sun;  Xiaoshuang Chen;  Mao Liu;  Lide Zhang
Adobe PDF(1191Kb)  |  Favorite  |  View/Download:23/12  |  Submit date:2016/07/12