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A Phase 2 Study of Befotertinib in Patients with EGFR T790M Mutated NSCLC after Prior EGFR TKIs 期刊论文
JOURNAL OF THORACIC ONCOLOGY, 2022, 卷号: 17
作者:  Lu, S.;  Zhang, Y.;  Zhang, G.;  Zhou, J.;  Cang, S.;  Cheng, Y.;  Wu, G.;  Cao, P.;  Lv, D.;  Jian, H.;  Chen, C.;  Jin, X.;  Tian, P.;  Wang, K.;  Jiang, G.;  Chen, G.;  Chen, Q.;  Zhao, H.;  Ding, C.;  Guo, R.;  Sun, G.;  Wang, B.;  Jiang, L.;  Liu, Z.;  Fang, J.;  Yang, J.;  Zhuang, W.;  Liu, Y.;  Zhang, J.;  Pan, Y.;  Chen, J.;  Yu, Q.;  Zhao, M.;  Cui, J.;  Li, D.;  Yi, T.;  Yu, Z.;  Yang, Y.;  Zhang, Y.;  Zhi, X.;  Huang, Y.;  Wu, R.;  Chen, L.;  Zang, A.;  Cao, L.;  Li, Q.;  Li, X.;  Song, Y.;  Wang, D.;  Zhang, S.
收藏  |  浏览/下载：39/0  |  提交时间：2022/12/23
third-generation EGFR-TKI  befotertinib  T790M  
Characterization of pedestal burst instabilities during I-mode to H-mode transition in the EAST tokamak 期刊论文
NUCLEAR FUSION, 2022, 卷号: 62
作者:  Zhong, X. M.;  Zou, X. L.;  Liu, A. D.;  Song, Y. T.;  Zhuang, G.;  Li, E. Z.;  Zhang, B.;  Zhang, J.;  Zhou, C.;  Feng, X.;  Duan, Y. M.;  Ding, R.;  Liu, H. Q.;  Lv, B.;  Wang, L.;  Xu, L. Q.;  Zhang, L.;  Zhao, H. L.;  Zang, Q.;  Zhang, T.;  Ding, B. J.;  Li, M. H.;  Qin, C. M.;  Wang, X. J.;  Zhang, X. J.
收藏  |  浏览/下载：45/0  |  提交时间：2022/05/16
I-mode  I-H transition  pedestal burst instabilities  density gradient  
Stacking effects on the structure and magnetic properties of MoN2 期刊论文
EPL, 2021, 卷号: 135
作者:  Liang, X.;  Lv, H. Y.;  Si, J. G.;  Hong, Y. T.;  Lu, W. J.;  Sun, Y. P.
收藏  |  浏览/下载：51/0  |  提交时间：2022/01/10
Chiral charge density waves induced by Ti-doping in 1T-TaS2 期刊论文
APPLIED PHYSICS LETTERS, 2021, 卷号: 118
作者:  Gao, J. J.;  Zhang, W. H.;  Si, J. G.;  Luo, X.;  Yan, J.;  Jiang, Z. Z.;  Wang, W.;  Lv, H. Y.;  Tong, P.;  Song, W. H.;  Zhu, X. B.;  Lu, W. J.;  Yin, Y.;  Sun, Y. P.
收藏  |  浏览/下载：45/0  |  提交时间：2021/09/06
Experimental identification of edge temperature ring oscillation and alternating turbulence transitions near the pedestal top for sustaining stationary I-mode 期刊论文
NUCLEAR FUSION, 2020, 卷号: 60
作者:  Liu, A. D.;  Zou, X. L.;  Han, M. K.;  Wang, T. B.;  Zhou, C.;  Wang, M. Y.;  Duan, Y. M.;  Verdoolaege, G.;  Dong, J. Q.;  Wang, Z. X.;  Xi, F.;  Xie, J. L.;  Zhuang, G.;  Ding, W. X.;  Zhang, S. B.;  Liu, Y.;  Liu, H. Q.;  Wang, L.;  Li, Y. Y.;  Wang, Y. M.;  Lv, B.;  Hu, G. H.;  Zhang, Q.;  Wang, S. X.;  Zhao, H. L.;  Qu, C. M.;  Liu, Z. X.;  Liu, Z. Y.;  Zhang, J.;  Ji, J. X.;  Zhong, X. M.;  Lan, T.;  Li, H.;  Mao, W. Z.;  Liu, W. D.
收藏  |  浏览/下载：108/0  |  提交时间：2020/11/30
I-mode  turbulence transition  pedestal top  azimuthally symmetric structure  
The giant planar Hall effect and anisotropic magnetoresistance in Dirac node arcs semimetal PtSn4 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 卷号: 32
作者:  Yan, J.;  Luo, X.;  Gao, J. J.;  Lv, H. Y.;  Xi, C. Y.;  Sun, Y.;  Lu, W. J.;  Tong, P.;  Sheng, Z. G.;  Zhu, X. B.;  Song, W. H.;  Sun, Y. P.
收藏  |  浏览/下载：29/0  |  提交时间：2020/10/26
planar Hall effect  topological materials  anisotropic magnetoresistance  
Origin of the multiple charge density wave order in 1T-VSe2 期刊论文
PHYSICAL REVIEW B, 2020, 卷号: 101
作者:  Si, J. G.;  Lu, W. J.;  Wu, H. Y.;  Lv, H. Y.;  Liang, X.;  Li, Q. J.;  Sun, Y. P.
收藏  |  浏览/下载：58/0  |  提交时间：2020/11/26
Planar Hall effect in the type-ll Weyl semimetal T-d-MoTe2 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 98, 期号: 4, 页码: 7
作者:  Chen, F. C.;  Luo, X.;  Yan, J.;  Sun, Y.;  Lv, H. Y.;  Lu, W. J.;  Xi, C. Y.;  Tong, P.;  Sheng, Z. G.;  Zhu, X. B.;  Song, W. H.;  Sun, Y. P.
收藏  |  浏览/下载：19/0  |  提交时间：2019/12/20
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.;  Zheng, C. Y.;  Lv, J. G.;  Liu, M.
浏览  |  Adobe PDF(3293Kb)  |  收藏  |  浏览/下载：129/65  |  提交时间：2018/07/04
High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices  
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.;  Gao, J.;  Jin, P.;  Jiang, S. S.;  Li, W. D.;  Sun, Z. Q.
浏览  |  Adobe PDF(2130Kb)  |  收藏  |  浏览/下载：134/86  |  提交时间：2018/07/04
High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel