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Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
Authors:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang;  Li, Wendong;  Sun, Zhaoqi;  Tian, Mingliang
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electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors  
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
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High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
Authors:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao;  Ma, Rui;  Sun, Zhaoqi
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High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism  
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
Authors:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
View  |  Adobe PDF(2273Kb)  |  Favorite  |  View/Download:25/5  |  Submit date:2017/10/18
High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation  
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
Authors:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao;  Lv, Jianguo;  Liu, Yanmei;  Zhang, Miao;  Wang, Peihong;  Sun, Zhaoqi
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High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties  
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7
Authors:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang;  Liu, Mao
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Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 1, 页码: 759-766
Authors:  Dongqi Xiao;  Gang He;  Zhaoqi Sun;  Jianguo Lv;  Peng Jin;  Changyong Zheng;  Mao Liu
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Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation 期刊论文
J. Mater. Chem. C, 2014, 卷号: 2, 期号: 27, 页码: 5299-5308
Authors:  Gang He;  Jiangwei Liu;  Hanshuang Chen;  Yanmei Liu;  Zhaoqi Sun;  Xiaoshuang Chen;  Mao Liu;  Lide Zhang
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Magnetic field-assisted synthesis of wire-like Co3O4 nanostructures: Electrochemical and photocatalytic studies 期刊论文
Materials Research Bulletin, 2013, 卷号: 48
Authors:  Xiubin Zhao;  Zhanwen Pang;  Mingzai Wu;  Xiansong Liu;  Hui Zhang;  Yongqing Ma;  Zhaoqi Sun;  Lide Zhang;  Xiaoshuang Chen
Adobe PDF(872Kb)  |  Favorite  |  View/Download:207/73  |  Submit date:2013/09/02
退火温度对硅基溅射铜膜应力的影响 期刊论文
真 空 科 学 与 技 术, 2002
Authors:  吴桂芳;  史守华;  何玉平;  王 磊;  陈 良;  孙兆奇
Adobe PDF(167Kb)  |  Favorite  |  View/Download:221/107  |  Submit date:2012/10/11