Browse/Search Results:  1-3 of 3 Help

Selected(0)Clear Items/Page:    Sort:
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
Authors:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao;  Ma, Rui;  Sun, Zhaoqi
View  |  Adobe PDF(607Kb)  |  Favorite  |  View/Download:28/6  |  Submit date:2017/11/21
High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism  
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7
Authors:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang;  Liu, Mao
View  |  Adobe PDF(4026Kb)  |  Favorite  |  View/Download:15/8  |  Submit date:2017/09/15
高精度太阳能跟踪控制器设计与实现 期刊论文
自动化与仪器仪表, 2010, 期号: 3
Authors:  关继文;  孔令成;  张志华
Adobe PDF(265Kb)  |  Favorite  |  View/Download:497/192  |  Submit date:2011/12/08