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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
Authors:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin;  Li, Jing;  Sun, Zhaoqi;  Liu, Yanmei;  Liu, Mao
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High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature  
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
Authors:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong;  Jin, Peng;  Xiao, Dongqi;  Liu, Mao
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High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation  
Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 1, 页码: 759-766
Authors:  Dongqi Xiao;  Gang He;  Zhaoqi Sun;  Jianguo Lv;  Peng Jin;  Changyong Zheng;  Mao Liu
View  |  Adobe PDF(1842Kb)  |  Favorite  |  View/Download:39/28  |  Submit date:2017/10/18